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| WFW18N50 Silicon N-Channel MOSFET Features 18A,500V,RDS(on)(Max0.265)@VGS=10V Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150) General Description These N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25) Continuous Drain Current(@Tc=100) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25) Junction and Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1) Parameter Value 500 18 12.7 80 30 330 27.7 4.5 280 -55~150 300 Units V A A A V mJ mJ V/ ns W Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient Value Min - Typ 0.24 - Max 0.45 40 Units /W /W /W Rev.A Aug.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. WFW18N50 Electrical Characteristics(Tc=25) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut -off current Drain -source breakdown voltage Breakdown voltage Temperature coefficient Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Switching time Turn-on time Fall time Turn-off time Total gate charge(gate-source plus gate-drain) Gate-source charge Gate-drain("miller") Charge Symbol IGSS V(BR)GSS IDSS V(BR)DSS BVDSS/ TJ VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton tf toff Qg Qgs Qgd Test Condition VGS=25V,VDS=0V IG=10 A,VDS=0V VDS=500V,VGS=0V ID=10 mA,VGS=0V ID=250A,Referenced to 25 VDS=10V,ID=250A VGS=10V,ID=9A VDS=40V,ID=9A VDS=25V, VGS=0V, f=1MHz VDD=250V, ID=18A RG=25 (Note4,5) VDD=400V, VGS=10V, ID=18A (Note4,5) Min 30 500 3 - Type 0.5 0.27 16 2530 11 300 40 150 95 110 42 12 14 Max 10 100 5 0.40 3290 14.3 390 90 310 200 230 55 - Unit nA V A V V/ V S pF ns nC Source-Drain Ratings and Characteristics(Ta=25) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR=18A,VGS=0V IDR=18A,VGS=0V, dIDR / dt =100 A / s Min - Type 1.6 20 Max 18 80 -1.9 - Unit A A V ns C Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=1.83mH IAS=18A,VDD=50V,RG=25,Starting TJ=25 3.ISD18A,di/dt200A/us,VDD WFW18N50 Fig.1 On State Characteristics Fig.2 Transfer Current Characteristics Fig.3 On-Resistance Variation vs Drain Current Fig.4 Body Diode Forward Voltage Variation with Source Current and Temperature Fig.5 Capacitance Characteristics Fig.6 Gate Charge Characteristics 3/7 Steady, all for your advance WFW18N50 Fig.7 Breakdown Voltage Variation Fig.8 On-Resistance Variation vs.Temperature Fig.9 Maximum Safe Operation Area Fig.10 Maximum Drain Current vs Case Temperature Fig.11 Transient Thermal Response Curve 4/7 Steady, all for your advance WFW18N50 Fig.12 Gate Test Circuit & Waveform Fig.13 Resistive Switching Test Circuit & Waveform Fig.14 Unclamped Inductive Switching Test Circuit & Waveform 5/7 Steady, all for your advance WFW18N50 Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, all for your advance WFW18N50 TO-3PN Package Dimension Unit:mm 7/7 Steady, all for your advance |
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